- 您现在的位置：买卖IC网 > Sheet目录416 > FDC8602 (Fairchild Semiconductor)MOSFET N-CH DUAL 100V 6-SSOT
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0 V
I D = 250 μ A, referenced to 25 °C
V DS = 80 V, V GS = 0 V
V GS = ±20 V, V DS = 0 V
100
73
1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th )
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25 °C
2
3.2
-8
4
V
mV/°C
V GS = 10 V, I D = 1.2 A
285
350
r DS(on)
Static Drain to Source On Resistance
V GS = 6 V, I D = 0.9 A
409
575
m Ω
V GS = 10 V, I D = 1.2 A, T J = 125 °C
489
600
g FS
Forward Transconductance
V DS = 10 V, I D = 1.2 A
1.3
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 50 V, V GS = 0 V,
f = 1MHz
53
17
0.8
1.6
70
25
5
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
3.5
10
ns
t r
t d(off)
t f
Q g(TOT)
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
V DD = 50 V, I D = 1.2 A,
V GS = 10 V, R GEN = 6 Ω
V GS = 0 V to 10 V
1.7
5.4
2.3
1.2
10
11
10
2
ns
ns
ns
nC
Q g(TOT)
Q gs
Total Gate Charge
Gate to Source Charge
V GS = 0 V to 5 V
V DD = 50 V,
I D = 1.2 A
0.6
0.4
1
nC
nC
Q gd
Gate to Drain “Miller” Charge
0.4
nC
Drain-Source Diode Characteristics
V SD
Source-Drain Diode Forward Voltage
V GS = 0 V, I S = 1.2 A
(Note 2)
0.86
1.3
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 1.2 A, di/dt = 100 A/ μ s
27
12
43
21
ns
nC
NOTES:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 130 °C/W when mounted on
a 1 in 2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3. Starting T J = 25 ° C; N-ch: L = 3 mH, I AS = 1 A, V DD = 100 V, V GS = 10 V.
b) 180 °C/W when mounted on a
minimum pad of 2 oz copper
?2011 Fairchild Semiconductor Corporation
FDC8602 Rev.C1
2
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
FDC86244
MOSFET N-CH 150V 2.3A 6SSOT
FDC8878
MOSFET N-CH 30V 8A 6-SSOT
FDC8884
MOSFET N-CH 30V 6.5A 6-SSOT
FDC8886
MOSFET N-CH 30V 6.5A 6-SSOT
FDD050N03B
MOSFET N-CH 30V 90A DPAK
FDD10AN06A0
MOSFET N-CH 60V 50A D-PAK
FDD13AN06A0
MOSFET N-CH 60V 50A D-PAK
FDD14AN06LA0_F085
MOSFET N-CH 60V 9.5A DPAK-3
相关代理商/技术参数
FDC86244
功能描述:MOSFET 150V N-Channel PowerTrench MOSFET
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC87W23
制造商:未知厂家 制造商全称:未知厂家 功能描述:Peripheral (Multifunction) Controller
FDC8878
功能描述:MOSFET 30V N-Channel PowerTrench MOSFET
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC8884
功能描述:MOSFET 30V N-Channel PowerTrench MOSFET
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC8886
功能描述:MOSFET 30V N-Channel Power Trench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC91C36BP
制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:SMSC 功能描述:
FDC91C36P
制造商:Rochester Electronics LLC 功能描述:- Bulk
FDC9216
制造商:未知厂家 制造商全称:未知厂家 功能描述:FLOPPY DISK DATA SEPARATOR FDDS